Electron bias control signals for electron enhanced material processing

ABSTRACT

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

CROSS REFERENCE TO RELATED APPLICATIONS

This patent application is a divisional application of U.S. patentapplication Ser. No. 17/668,301, filed on Feb. 9, 2022, the disclosureof which is incorporated herein by reference in its entirety

The present application is related to U.S. Application No. 17,524,330,entitled “DC Plasma Control for Electron Enhanced Material Processing”(Attorney Docket No. P2641-US) filed on Nov. 11, 2021, the disclosure ofwhich is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure generally relates to systems and methods forcontrolling free electrons in a DC plasma reaction chamber used formaterial processing, in particular, generation of waveforms for biasingsignals to control the kinetic energy of free electrons such as toproduce wafer scale waves of precisely controlled electrons in a DCplasma at room temperatures (or other temperatures when desired).

BACKGROUND

Fabrication of, for example, integrated circuits, may include processingof corresponding substrates within a (direct-current) DC plasma reactionchamber wherein electrons and/or ions are accelerated towards thesurface of the substrate to initiate a reaction that physicallytransforms the surface of the substrate. In some cases, and mainly dueto the relatively smaller mass of electrons compared to ions, substrateprocessing via electrons may be preferred so as to reduce any damage tothe surface of the substrate beyond the targeted physical alterationsexpected by the processing step per se.

In some cases, plasma processing may include arrangement of thesubstrate in a region of the DC plasma reaction chamber such that anexact value of a surface floating potential of the substrate is notknown. Accordingly, any externally applied bias signal to the substratemay impart an energy to free electrons in a region of the plasma closeto the surface of the substrate that may not correlate to the electronenergy thresholds/levels of (atoms) materials present at the surface ofthe substrate.

The above referenced U.S. Application No. 17,524,330, the disclosure ofwhich is incorporated herein by reference in its entirety, describesmethods and systems for precise and selective control of the value ofthe surface floating potential of the substrate, and therefore enableprecise and selective control of energy levels of atoms at the surfaceof the substrate. Teachings according to the present disclosure takeadvantage of such precise and selective control of the energy levels ofatoms at the surface of the substrate to produce corresponding timingand amplitude of waveforms for signals used for biasing of the freeelectrons in the DC plasma chamber so to generate wafer scale waves ofelectrons that specifically target the energy levels of the atoms at thesurface of the substrate.

SUMMARY

Systems and methods for material processing using wafer scale waves ofprecisely controlled electrons in a DC plasma at room temperatures (orother temperatures if desired) are presented. In the present disclosuresuch material processing is referred to as electron enhanced materialprocessing (EEMP) which allows precise control of the kinetic energy offree electrons in the DC plasma to exactly (and selectively) targetenergy levels of the electrons of atoms at the surface of a substratebeing processed.

According to a first embodiment of the present disclosure, adirect-current (DC) plasma system for processing of a substrate ispresented, comprising: a DC plasma reaction chamber configured tocontain a DC plasma that is generated between an anode and a cathode ofthe DC plasma reaction chamber; a substrate support stage arranged in aregion of the DC plasma reaction chamber that contains a positive columnof the DC plasma, means to preset a floating potential at a surface ofthe substrate support stage to a reference potential; and a biasingsignal generator that is capacitively coupled to the substrate supportstage, the biasing signal generator configured to generate a periodicbiasing signal having a voltage that is referenced to the referencepotential, the periodic biasing signal comprising: an active phasehaving a positive voltage; a neutralization phase having a negativevoltage; and an initialization phase having a zero voltage.

According to a second embodiment of the present disclosure, a method forprocessing a surface of a substrate is presented, the method comprising:placing a substrate on a support stage in a region of a DC plasmareaction chamber configured to produce a positive column of DC plasma;generating the DC plasma; presetting a floating potential at the surfaceof the substrate to a reference potential; and capacitively coupling, tothe support stage, a periodic biasing signal having a biasing voltagethat is referenced to the floating potential, the periodic biasingsignal comprising: an active phase having a positive voltage that isbased on a known reaction threshold voltage of targeted chemical bondscomprised of electrons of atoms at the surface of a substrate; aneutralization phase having a negative voltage; and an initializationphase having a zero voltage.

Further aspects of the disclosure are shown in the specification,drawings and claims of the present application.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings, which are incorporated into and constitute apart of this specification, illustrate one or more embodiments of thepresent disclosure and, together with the description of exampleembodiments, serve to explain the principles and implementations of thedisclosure.

FIG. 1A shows a simplified schematic view of a DC plasma reactionchamber that can be used in a DC plasma processing system.

FIG. 1B shows a graph representative of a variation in (electric)potential of the plasma during operation of the DC plasma reactionchamber of FIG. 1A.

FIG. 1C shows a simplified schematic view of a DC plasma processingsystem comprising a (substrate) stage arranged in a region of the DCplasma reaction chamber of FIG. 1A.

FIG. 1D shows an exemplary biasing of the stage of the DC plasmaprocessing system of FIG. 1C via an external biasing signal generator.

FIG. 1E shows an exemplary biasing signal generated by the externalbiasing signal generator of FIG. 1D and a corresponding potentialgenerated at the surface of the stage.

FIG. 1F shows exemplary energy levels of atoms at a surface of thestage.

FIG. 2A shows a simplified schematic view of a DC plasma processingsystem according to an embodiment of the present disclosure comprisingmeans to control a surface potential of the stage.

FIG. 2B shows graphs representative of control of the surface potentialof the stage for the DC plasma processing system of FIG. 2A.

FIG. 2C shows graphs representative of adjusting the surface potentialof the stage to a reference ground potential for the DC plasmaprocessing system of FIG. 2A

FIG. 3A shows a simplified schematic view of a DC plasma processingsystem according to an embodiment of the present disclosure comprisingmeans to control a surface potential of the stage and means to measurethe surface potential.

FIG. 3B shows a simplified schematic view of a DC plasma processingsystem according to an embodiment of the present disclosure that isbased on the system of FIG. 3A with added means for automatic control ofthe surface potential.

FIG. 4A shows a simplified schematic view of a DC plasma processingsystem according to an embodiment of the present disclosure that isbased on the system of FIG. 3B with added means for biasing of thestage.

FIG. 4B shows an exemplary biasing signal provided to the stage of theDC plasma processing system of FIG. 4A and a corresponding potentialgenerated at the surface of the stage.

FIG. 4C shows exemplary energy levels of atoms at a surface of thestage.

FIG. 5 is a process chart showing various steps of a method according toan embodiment of the present disclosure for processing a surface of asubstrate.

FIGS. 6A-6C show graphs representative of reaction rates of electronenhanced material processing (EEMP) according to the present disclosurefor different materials.

FIG. 7A-7C show graphs representative of waveforms for EEMP biasingsignals according to some exemplary embodiments of the presentdisclosure for processing of different materials.

FIG. 8A shows a graph representative of an idealized waveform for theEEMP biasing signals.

FIG. 8B shows a graph representative of a practical waveform for theEEMP biasing signals.

FIG. 8C shows a graph representative of an analog waveform undercapacitive loading conditions.

FIG. 9A shows graphs representative of a digitized waveform forgeneration of the practical waveform of FIG. 8B, and a correspondingdigitized waveform with predistortion.

FIG. 9B shows a graph representative of an analog waveform generatedfrom the digitized waveform with predistortion of FIG. 9A undercapacitive loading conditions.

FIG. 10A shows graphs representative of gain versus frequency of aband-limited linear power amplifier according to an embodiment of thepresent disclosure and a gain versus frequency of a conventional poweramplifier.

FIG. 10B shows a graph representative of an analog waveform generatedfrom the digitized waveform with predistortion of FIG. 9A through theband-limited linear power amplifier of FIG. 10A under capacitive loadingconditions.

FIG. 11 is a process chart showing various steps of a method accordingto another embodiment of the present disclosure for processing a surfaceof a substrate.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION

FIG. 1A shows a simplified schematic view of a prior art(direct-current) DC plasma reaction chamber (110) that can be used in aDC plasma processing system. Biasing of the DC plasma reaction chamber(110) may be provided by a DC voltage source (150) coupled between ananode, A, and a cathode, C, of the DC plasma reaction chamber (110).During operation, a glow discharge (plasma) may be formed in the chamber(110) based on interaction of a gas and electrons of a current thatflows between the anode, A, and the cathode, C. This in turn producesfree ions and electrons in the chamber (110). The principle of operationof such DC plasma reaction chamber (110) is well known to a personskilled in the art and therefore related details are omitted in thepresent disclosure.

As shown in FIG. 1A, the glow discharge formed in the chamber (110) mayinclude glow regions (G1, G2, G3, G4) that emit significant light, anddark regions (D1, D2, D3, D4) that may not emit light. Such regions mayrepresent different operating characteristics of the DC plasma reactionchamber (110), including, for example, temperature and electricpotential.

FIG. 1B shows a graph representative of a variation in the (electric)potential, V_(PP), of the plasma along an axial direction (direction oflongitudinal extension), X, of the chamber (110) during operation. Asshown in FIG. 1B, the plasma potential, V_(PP), varies from a value,V_(C), that represents the potential applied to the cathode, C, by theDC voltage source (150 of FIG. 1A), to a value, V_(A), that representsthe potential applied to the anode, A, by the DC voltage source (150 ofFIG. 1A). It should be noted that as shown for example in FIG. 1D laterdescribed, generally the value, V_(A), is at zero volts (e.g., referenceground) and the value, V_(C), is negative (e.g., in a range of about 0(zero) to −500 volts).

With continued reference to FIG. 1B, abrupt variation of the potential,V_(PP), in the regions (e.g., D1, G1, D2) close to the cathode, C, andin the regions (e.g., G4) close to the anode, A, may correspond toregions of higher operating temperatures of the chamber (110). On theother side, the region G3, also known as the positive column, is aregion of quasi uniform/constant potential, V_(PP), and of loweroperating temperature. For example, considering a segment [X_(G31),X_(G32)] along the axial direction, X, of the chamber (110) that asshown in FIG. 1B is contained within the positive column region, G3, avariation of the plasma potential, V_(PP), across such segment [X_(G31),X_(G32)] is minimal, or in other words, the potential, V_(PP), acrossthe segment [X_(G31), X_(G32)] may be considered as constant.Accordingly, as shown in FIG. 1B, the plasma potential, V_(PP), acrossthe segment [X_(G31), X_(G32)] may be considered as equal to a valueV_(G3). The lower operating temperature and the constant potential valueof the plasma in the positive column region, G3, allow use of suchregion for processing of substrates as shown in FIG. 1C and FIG. 1D.

FIG. 1C shows a simplified schematic view of a DC plasma processingsystem (100C) comprising a (substrate) stage, S, arranged in thepositive column region, G3, of the DC plasma reaction chamber (110). Thestage, S, may be designed to support a flat substrate, and therefore mayinclude a top flat/planar surface. The stage, S, shown in FIG. 1C iselectrically isolated (not connected to any external electric potential)and therefore, and as known to a person skilled in the art, in thepresence of the plasma potential, V_(PP), a potential, V_(S), developsat the surface of the stage, S, that is referred to as the surfacefloating potential, V_(FP). The relationship of the (surface) floatingpotential, V_(FP), to the plasma potential, V_(PP), is shown FIG. 1C. Inparticular, as shown in FIG. 1C, the plasma potential, V_(PP), at aregion [X_(G31), X_(G32)] of the chamber (110) where the stage, S, isarranged is equal to V_(G3), and the floating potential, V_(FP), islower than (negative with respect to) the plasma potential V_(G3).

The floating potential, V_(FP), shown in the graph of FIG. 1C can beattributed to the “plasma sheath” that develops in the presence of thestage, S. As known to a person skilled in the art, at the wall or anybarrier within the plasma, a negative potential develops with respect tothe bulk of the plasma. Consequently, an equilibrium potential dropdevelops between the bulk of the plasma and the wall or barrier. Suchpotential drop is confined to a small region of space next to the wallor barrier due to the charge imbalance that develops between the plasmaand the wall or barrier. This layer of charge imbalance has a finitethickness, characterized by the Debye Length, and is called the “plasmasheath” or “sheath”. The thickness of such a layer is several Debyelengths thick, a value whose size depends on various characteristics ofthe plasma. If the dimensions of the bulk plasma (e.g., chamber 110) aremuch greater than the Debye length, for example, then the Debye lengthdepends on the plasma temperature and electron density. In theparticular case of the DC plasma operating conditions supported by theteachings according to the present disclosure (e.g., EEMP system nearroom temperature to moderately above room temperature), the Debye lengthis in the order of several millimeters (e.g., less than 10 millimeters),and the difference between the potentials V_(G3) and V_(FP) is in theorder of several volts (e.g., less than 10 volts). It should be notedthat the plasma sheath may develop in the presence of any wall orbarrier, whether conductive or not. Accordingly, once a substrate(whether conductive or insulating) is placed atop the stage, S, the samefloating potential, V_(FP), as described above with reference to FIG. 1Cmay develop at the surface of the substrate.

FIG. 1D shows an exemplary biasing of the stage, S, of the DC plasmaprocessing system of FIG. 1C via an external biasing signal generator(180) that is capacitively coupled to the stage, S, by a capacitorC_(S). In the exemplary configuration (100D) shown in FIG. 1D, thepotential, V_(A), applied to the anode, A, is at zero volts (e.g.,coupled to the reference ground, Gnd). Furthermore, as shown in FIG. 1D,a biasing signal, V_(B), applied to the stage, S, by the externalbiasing signal generator (180) may be referenced to the reference groundpotential, Gnd. Although in some prior art implementations the biasingsignal, V_(B), may be DC coupled to the stage, S, teachings according tothe present disclosure strictly prohibit such DC coupling to the stageso as to avoid a discharge path for a DC current through anyintermediate points in the chamber (110), as such discharge path maysubstantially change operating conditions within the chamber (110).

In the DC plasma processing system shown in FIG. 1D, the biasing signal,V_(B), may be used to control a potential (e.g., surface potentialV_(S)) seen by free electrons and/or ions in the vicinity of the stage,S, or of the substrate when present. Accordingly, energy of the freeelectrons and/or ions may be controlled to the material specific levelsrequired for (optimum) processing of the substrate. For example, asshown in the left-side graph of FIG. 1E, the biasing signal, V_(B),generated by the external biasing signal generator (e.g., 180 of FIG.1D) may start from zero and reach in a short period of time (representedby a leading edge slope) a voltage amplitude, V_(B1) When the voltageamplitude, V_(B1), is applied (e.g., AC coupled) to the stage, S, duringa processing step (a) as shown in the top right-side graph of FIG. 1E,the voltage amplitude, V_(B1), gets added (or subtracted if negative) tothe surface floating potential, V_(FPa), to generate a surfacepotential, V_(S), at the vicinity of the stage, S. However, because thefree electrons and/or ions are at the plasma potential, V_(PPa), only aportion of the surface potential, V_(S), that is above the plasmapotential, V_(PPa), is seen by the free electrons and/or ions. Forexample, as shown in the top right-side graph of FIG. 1E, the (kinetic)energy of the free electrons and/or ions may be based on a potentialdifference V_(KEa)=(V_(B1)−ΔV_(FPa)), with ΔV_(FPa), =(V_(PPa)−V_(FPa)).

On the other hand, considering a processing step (b) represented by thebottom right-side graph of FIG. 1E, which may have operating conditionsthat are different from the operating conditions of the processing step(a), including for example, a different plasma potential, V_(PPb), or adifferent floating potential, V_(FPb), that may cause a differentdifferential ΔV_(FPb), =(V_(PPb)−V_(FPb)), then for the same appliedvoltage amplitude, V_(B1), a different (kinetic) energy of the freeelectrons and/or ions is obtained. Teachings according to the presentdisclosure either eliminate variations in the operating conditionswithin the chamber (e.g., 110 of FIG. 1D), and/or compensate for suchvariations such as to allow, for example, precise control of the energyof the free electrons (and/or ions). It should be noted that variationin the operating conditions may be expected in view of different typesof processing (e.g., (a) and (b) of FIG. 1E) performed within thechamber (110), including for example, etching of a substrate withdifferent reactive gasses, cleaning of a substrate or any other processthat may alter and/or remove composition/material from the surface ofthe substrate. It should be noted that, as known by a person skilled inthe art, the different operating conditions for performing the differenttypes of processing may further include corresponding variations and/oradjustments to any one of the DC plasma current, temperature, gasmixture or flow rate within the chamber (110).

When a substrate is placed atop the surface of the stage, S, the kineticenergy of the free electrons and/or ions acquired through theapplication of the bias signal, V_(B), described above may acceleratethe free electrons and/or ions towards the surface of the substrate andcollide with the substrate to release the kinetic energy onto atoms atthe surface of the substrate. Those atoms however are at an energy levelthat is based on the potential within which they reside, or in otherwords, based on the floating potential, V_(FP). Various energy levels ofone such atom for the processing type (a) described above with referenceto FIG. 1E are shown in FIG. 1F, including the energy level, E_(n), of anucleus of an atom at the surface of the substrate, the energy level,E_(B), of an electron bound to the nucleus of an atom at the surface ofthe substrate, and the energy level, E_(e), of an electron at the orbitof an electron bound to a nucleus at the surface of the substrate.

As can be seen in FIG. 1F, the energy level, E_(n), of the nucleus is atthe (negative) potential, V_(FPa), and the energy level, E_(e), of theelectron is at the (negative) potential (E_(n)+E_(B)). In other words,in order to excite the atom to a level that breaks the bond between theelectron and the nucleus, an energy equal to, or greater than, theenergy level, E_(e), of the electron must be imparted onto the atom.Accordingly, considering a plasma processing only via the freeelectrons, the kinetic energy of the free electrons provided throughapplication of the bias signal, V_(B), represented in FIG. 1F by thepotential difference V_(KEa)=(V_(B1)−ΔV_(FPa)) must be equal to, orgreater than, the energy level, E_(e). However, sinceE_(e)=(E_(n)+E_(B)) and E_(n) is based on the a priori unknown floatingpotential, V_(FPa), precise control of the kinetic energy of the freeelectrons to precisely target the energy level, E_(e), may not bepossible.

Although the floating potential (e.g., V_(FPa) of FIG. 1F) may beempirically and/or experimentally determined for a given process atstable operating conditions of the DC plasma chamber, anyinconsistencies and/or lack of repeatability of such operatingconditions may invalidate the determined floating potential.Furthermore, as different types of processes inherently yield todifferent floating potentials, the task of precisely controlling thekinetic energy of the free electrons to exactly target the energy levelof an atom at the surface of the substrate may not be feasible. As aresult, some prior art implementations impart kinetic energies onto theatoms at the surface of the substrate that may be substantially largerthan a target atom energy level, and therefore may not allow forselectivity (as atoms of different materials/compositions havingdifferent energy levels may equally be subjected to energy levelssufficient to break their orbital bonds). Electron enhanced materialprocessing (EEMP) according to the teachings of the present disclosureovercome such shortcoming and therefore allow precise control of thekinetic energy of the free electrons to exactly and selectively targetthe energy level of an atom at the surface of the substrate.

FIG. 2A shows a simplified schematic view of a DC plasma processingsystem (200A) according to an embodiment of the present disclosurecomprising means (250, 260) to control the surface potential of thestage, S, when electrically isolated. In other words, these means (250,260) allow for adjustment of the floating potential, V_(FP). As shown inFIG. 2A, the means (250, 260) include an adjustable DC voltage source(250) that is coupled to the anode, A, of the DC plasma reaction chamber(110), and a DC current source (260) that is coupled to the cathode, C,of the DC plasma reaction chamber (110). Accordingly, the potential,V_(A), of the anode, A, may be controlled to be in a range from zerovolts and upward (positive) with respect to the reference ground (Gnd atzero volts), and a (drain) current, Ip, that flows between the anode, A,and the cathode, C, through the reaction chamber (110) can be set by theDC current source (260). Accordingly, the potential, V_(C), of thecathode, C, is not forced by an external DC voltage source (e.g., 150 ofFIG. 1D), rather (it is floating and) settles to a (negative) voltagethat is based on the adjustable potential V_(A) of the anode A, and theset current, Ip. Such a configuration allows independentlycontrol/adjust of the floating potential, V_(FP), while maintaining theset current, Ip, through the reaction chamber (110) constant toestablish and maintain a higher level of process stability andoptimization.

FIG. 2B shows two graphs representative of control of the surfacepotential, V_(FP), of the stage, S, for the DC plasma processing system(200A) described above with reference to FIG. 2A. In particular, FIG. 2Bshows two graphs distinguished by use of solid or dashed lines, eachrepresenting the variation of the plasma potential, V_(PP), across thelongitudinal extension, X, of the chamber (110) for two differentvoltages (V_(A1), V_(A2)) applied to the anode, A, by the adjustable DCvoltage source (250). As can be seen in FIG. 2B, for a positive stepincrease, +ΔV₁₂, of the anode potential from the voltage V_(A)) to thevoltage V_(A2), the floating potential (V_(FP1), V_(FP2)) and thecathode potential (V_(C1), V_(C2)) increase by the same positive step,+ΔV₁₂. As a matter of fact, as shown in FIG. 2B, the entirety of plasmapotential, V_(PP), curve shifts positive by the step +ΔV₁₂. In otherwords, for any longitudinal coordinate, X, in the range [X_(C), X_(A)],a corresponding plasma potential, V_(PP)(X), follows the step increase,+ΔV₁₂. The same behavior applies to negative step variations applied tothe anode, A, by the adjustable DC voltage source (250). In other words,control of the anode, A, potential by the adjustable DC voltage sourcelinearly affects the plasma potential, V_(PP), at any longitudinalcoordinate, X, and therefore, linearly affects the floating potential,V_(FP), and the voltage, V_(S), atop the stage, S, As later described inthe present disclosure, such linearity can be used in the EEMP systemaccording to the present teachings to implement a closed loop controlsubsystem to automatically control the value of the floating potential,V_(FP), to a preset value (e.g., zero volts) while operating the DCplasma chamber for different types of material processing.

FIG. 2C shows two graphs similar to the graphs described above withreference to FIG. 2B, including a specific case where the anode voltage,V_(A1), is equal to zero volts (solid lines). As can be seen in FIG. 2B,the floating potential voltage for such case is equal to a negativevalue, V_(FP1), and therefore negative with respect to (below) theplasma potential, V_(PP). Furthermore, as can be seen in FIG. 2C, for apositive step increase, +ΔV₁₃=(V_(A1)−V_(FP1)), of the anode potential,the floating potential can be adjusted to a value, V_(FP3), that isequal to zero volts. According to an embodiment of the presentdisclosure, such zeroing of the floating potential, V_(FP), may allowprecise control of the kinetic energy of free electrons in the DC plasmato exactly (and selectively) target energy levels of atoms at thesurface of a substrate (whether conductive or insulating) beingprocessed. In other words, and with reference back to FIG. 1F, the apriori unknown floating potential that determines the energy level,E_(n), of a nucleus of an atom targeted/selected for processing isremoved by zeroing of the floating potential, V_(FP). In turn, as shownin FIG. 4B later described, this allows to reference the energy level,E_(e), of target electrons, the kinetic energy level of the freeelectrons in the DC plasma (e.g., V_(KEa) of FIG. 1F), and the biasingvoltage, V_(B), applied to the stage, S, to the same known and fixedreference of zero volts potential, Gnd. It should be noted that althoughprovision of a known level of the floating potential, V_(FP), may beprovided by zeroing such potential as described above, such zeroingshould not be considered as limiting the scope of the present disclosureas other preset/adjusted non-zero values of the floating potential mayequally serve as a reference potential for precise control of thekinetic energy of free electrons in the DC plasma to exactly (andselectively) target energy levels of atoms at the surface of a substrate(whether conductive or insulating) being processed.

FIG. 3A shows a simplified schematic view of a DC plasma processingsystem (300A) according to an embodiment of the present disclosurecomprising means (250, 260 of FIG. 2A) to control a surface potential ofthe stage, S, and means (R, 311, V_(R) of FIG. 3A) to measure thesurface potential, V_(S) (e.g., floating potential, V_(FP)) atop thestage. As understood by a person skilled in the art, the system (300A)represents an improvement over the system (200A) described above withreference to FIG. 2A by adding the means (R, 311, V_(R)) to measure thesurface potential, V_(S), or in other words, to measure the (surface)floating potential, V_(FP) atop the stage. By enabling such measurementof the floating potential, V_(FP), adjustment of the DC voltage source(250) as described above with reference to FIGS. 2A-2C may be performedwhile monitoring/measuring the surface potential, V_(FP). This in turnallows precise control of the floating potential, V_(FP), including, forexample, to zero such potential (V_(FP)=0 volts).

With continued reference to FIG. 3A, the means (R, 311, V_(R)) includesa reference plate, R, that is placed within DC plasma chamber (110) at asame (longitudinal coordinate) segment [X_(G31), X_(G32)] as the stage,S. The reference plate, R, may be fabricated from any conductivematerial capable of withstanding (internal) operating conditions of thechamber (110), and may have any planar shape, including planar shapesaccording to, for example, a square, rectangle, circle, pentagon,trapezoid or other. Because the reference plate, R, is arranged in thesame region of the plate, S, and therefore in a region of a samesubstantially constant plasma potential, V_(PP), the reference plate, R,sees the same floating potential, V_(FP), as the stage, S. In otherwords, by measuring the (surface) potential, V_(R), at the referenceplate, R, the floating potential at the stage, S, can be determined. Aninsulated conductive wire (311) attached to the reference plate, R, maybe used to route/couple the potential, V_(R), to measurement electronics(e.g., transducer) placed outside the chamber (110). It should be notedthat such measurement electronics should not provide a DC current pathto the plasma through plate R.

With continued reference to FIG. 3A, placement of the reference plate,R, may be at any longitudinal extension of the chamber (110) within thesegment [X_(G31), X_(G32)] that is technically feasible and practical.As the chamber (110) may include an access door adjacent the stage, S,on one side of the chamber (110), in some exemplary embodiments thereference plate, R, may be arranged against, or in the vicinity, of awall of the chamber (110) that is on an opposite side of the access doorand stage, S. Furthermore, according to an exemplary embodiment, acenter of the reference plate, R, and a center of the stage, S, (e.g.,intersection of the two segments that make the T shape of the stage asshown in the figures) may be contained within a line that isperpendicular to the axial direction (e.g., centerline, direction oflongitudinal extension) of the chamber (110). Applicants of the presentdisclosure have verified high accuracy of the means (R, 311, V_(R)) intracking of the floating potential of the stage, S.

FIG. 3B shows a simplified schematic view of a DC plasma processingsystem (300B) according to an embodiment of the present disclosure thatis based on the system (300A) of FIG. 3A with added means (320, CT) forautomatic control of the surface potential, V_(FP), at the stage, S. Themeans (320, CT) includes control electronics (320) configured toimplement a closed loop control system to automatically control thevalue of the floating potential, V_(FP), at the stage, S, to a presetvalue (e.g., zero volts) while operating the DC plasma chamber fordifferent types of processing. In particular, as shown in FIG. 3B, thecontrol electronics (320) takes the (surface) potential, V_(R), of thereference plate, R, as input via a coupling provided by the insulatedconductive wire (311), and generates therefrom a control (error) signal,CT, to the adjustable DC voltage source (250) to adjust the voltage,V_(A), provided to the anode, A, and therefore, as described above withreference to FIGS. 2A-2C, adjust the floating potential, V_(FP), at thestage, S. The control (error) signal, CT, may be generated with respectto a desired target/preset value of the floating potential, V_(FP), suchas, for example, zero volts. A person skilled in the art is well awareof design techniques for implementing the control electronics (320)which are outside the scope of the present disclosure. In particular, aperson skilled in the art is well aware of using operational amplifiersor error amplifiers in such control electronics (320), wherein inputs ofsuch amplifiers may be coupled to the potential, V_(R), and to thedesired target/preset value (e.g., zero volts) of the floatingpotential, V_(FP), to generate an error signal (e.g., CT) based on adifference of the inputs.

FIG. 4A shows a simplified schematic view of a DC plasma processingsystem (400A) according to an embodiment of the present disclosure thatis based on the system of FIG. 3B with added biasing means (C_(S), 480)for biasing of the stage, S. In particular, the biasing means (C_(S),480) includes a biasing signal generator (480) that is coupled to thestage, S, through a capacitor, C_(S), of the biasing means. In otherwords, a biasing signal, V_(B), generated at an output of the biasingsignal generator (480) is capacitively coupled to the stage, S, throughthe capacitor, C_(S). As previously described in the present disclosure,such capacitive coupling may allow removal of any DC current path fromor into the DC plasma chamber (110), thereby preventing any undesiredperturbation of operating conditions of the chamber (110). It should benoted that the biasing signal generator (480) may include, for example,a programmable waveform generator configured to output a waveform of thebiasing signal, V_(B), according to desired characteristics, includingfor example, amplitude, frequency, duty cycle and/or rising/fallingedges/slopes. It is further noted that the stage, S, may include a firstconductive portion (e.g., vertical lead connected to the capacitorC_(S)) for electrical coupling of the biasing signal, V_(B), to thestage, S, and a second portion of the stage (e.g., horizontal supportplate) that may include conductive and/or insulating material.

FIG. 4B shows an exemplary biasing signal, V_(B1), provided to thestage, S, of the DC plasma processing system (400A) of FIG. 4A and acorresponding surface potential, V_(S), generated at the surface of thestage, S. As can be clearly understood by a person skilled in the art,the graphs shown in FIG. 4B correspond to a configuration of the system(400) wherein the floating potential, V_(FP), is adjusted or controlledto be at zero volts. Accordingly, and in view of (or in contrast to) theabove description with reference to FIG. 1E, the (kinetic) energy of thefree electrons and/or ions attracted to the surface of the stage, S, ora substrate thereupon, is based on the potential differenceV_(KE)=(V_(B1)−ΔV_(FP)), with ΔV_(FP)=(V_(PP)−V_(FP)). Accordingly,since in practical substrate processing applications using a DC plasmachamber, a value of ΔV_(FP) may be substantially smaller (e.g., ratio of1/50 or smaller) than the value of V_(KE) (e.g., based on the energylevel E_(e) of a target electron per FIG. 4C); an approximationV_(KE)=V_(B1) may be considered reasonable. In turn, this allows asimple and straightforward generation of the biasing signal, V_(B1),provided to the stage, S, for implementation of the electron enhancedmaterial processing (EEMP) according to the teachings of the presentdisclosure that exactly and selectively targets the energy level of anatom (e.g., bound electron) at the surface of the substrate.

With further reference to FIG. 4A and FIG. 4B, it is noted thatexcitation of the energy levels of the atoms at the surface of thestage, S, or at the surface of a substrate arranged atop the stage, S,may be primarily based on an instantaneous change in the surfacepotential, V_(S). Accordingly, excitation of the energy levels may beaccomplished immediately at the end of the transition of the biasingvoltage to the target value, V_(B1), or in other words, at the end ofthe slope shown in FIG. 4B.

FIG. 4C shows exemplary energy levels of atoms at a surface of thestage, S, of the DC plasma processing system (400A) of FIG. 4A. FIG. 4Chighlights benefits of the electron enhanced material processing (EEMP)according to the teachings of the present disclosure that allowsadjustments to exactly and selectively target the energy level of anatom (e.g., E_(e)≈V_(KE) per FIG. 4C) at the surface of the substratebased on the zeroing of the floating potential, V_(FP), according theabove description with reference to FIGS. 2A-2C, further based on thereference plate, R, according to above description with reference toFIG. 3A, further based on the (optional) closed loop control systemprovided by the control electronics (320) according to the abovedescription with reference to FIG. 3B, and further based on thecapacitive coupling of the biasing signal, V_(B), provided by thebiasing signal generator (480) according to the above description withreference to FIG. 4A.

FIG. 5 is a process chart (500) showing various steps of a methodaccording to an embodiment of the present disclosure for processing asurface of a substrate. As shown in FIG. 5 , such steps comprise:placing a substrate support stage in a region of a DC plasma reactionchamber configured to produce a positive column of the DC plasma,according to step (510); generating a DC plasma by coupling anadjustable DC voltage source and a DC current source respectively to ananode and a cathode of the DC plasma reaction chamber, according to step(520); based on the generating, producing a floating potential at asurface of the substrate support stage, according to step (530);adjusting a potential at the anode via the adjustable DC voltage sourcewhile maintaining via the DC current source a constant DC currentbetween the anode and the cathode, according to step (540); and based onthe adjusting and the maintaining, setting the floating potential to apotential of a reference ground of the adjustable DC voltage source,according to step (550).

FIGS. 6A-6C show graphs representative of reaction rates of electronenhanced material processing (EEMP) according to the present disclosurefor different (categories/types/classes of) materials, including, singlecrystal or 2-dimentional (2D) materials (FIG. 6A) such as for example asemiconductor or insulator material, metals and metal alloys (FIG. 6B),and complex materials (FIG. 6C) such as polymers, composites,nano-materials or 3-dimensional (3D) materials. In this case, areaction, or a targeted reaction, may be referred to as the breaking ofchemical bonds (e.g., bonds between electrons and nucleus) of atoms of amaterial at the surface of a substrate that is placed atop the stage(e.g., S of FIG. 4A) responsive to a level of the biasing signal, V_(B),applied to the stage (e.g., S of FIG. 4A). As can be clearly taken fromsuch graphs, the reaction rate, RR, may be characterized by a reactionthreshold voltage, V_(RTH), a reaction cutoff voltage, V_(RCO), and areaction threshold variation voltage, V_(RTHV). It should be noted thatfor each material, or type of material, such characteristic voltages maybe different and typically part of a priori acquired knowledge base. Forexample, the V_(RTH), of a crystal material (e.g., FIG. 6A) may bedifferent from the V_(RTH), of a metal material (e.g., FIG. 6B) or theV_(RTH) of a complex material (e.g., FIG. 6C), and the V_(RTHV), of acrystal material (e.g., FIG. 6A) may be different from the V_(RTHV), ofa metal (e.g., FIG. 6B) or a complex material (e.g., FIG. 6C).

It should be noted that 2D materials compatible with the electronenhanced material processing (EEMP) according to the present disclosuremay include, for example, graphene, boron nitride, molybdenum disulfide,tungsten diselenide, or platinum diselenide; Nano materials compatiblewith the EEMP according to the present disclosure may include, forexample, carbon nanotubes, nano-silver particles, titanium oxideparticles, or quantum dots; 3D materials compatible with the EEMPaccording to the present disclosure may include any 3D structure formedin a material, including for example, a polymer, collagen fiber or ametal such as, for example, titanium, or 3D printed polymer/polymer,polymer/carbon, or polymer/metal microstructures. Single crystalscompatible with the EEMP according to the present disclosure mayinclude, semi conducting single crystals, such as, for example, IVsilicon, germanium, III-V gallium arsenide, gallium nitride, siliconcarbide, indium gallium arsenide, etc., II-VI zinc selenide, and quantumwell stacks that contain alternating layers of III-V compoundsemiconductors, and/or II-VI compound semiconductors. Single crystalscompatible with the EEMP according to the present disclosure may furtherinclude semi conducting single crystals, such as, for example, quartz,sapphire or diamond. Polymers compatible with the EEMP according to thepresent disclosure may include, for example, polypropylene,polyethylene, polyether ether ketone, polycarbonate. Compositescompatible with the EEMP according to the present disclosure mayinclude, for example, polymers containing metal particles, carbonparticles, carbon fibers or carbon nanotubes. Materials and structuresenumerated herewith should be considered as nonlimiting with regard to amaterial compatibility list of the EEMP according to the presentteachings, which list can grow as new materials/structures andcorresponding binding and reaction energies (that can be targeted withthe present EEMP) are obtained, via, for example, advanced methods forcomputer simulation of chemical bonds.

With continued reference to FIGS. 6A-6C, when a substrate is placed atopthe stage (e.g., S of FIG. 4A), as described above with reference to,for example, FIG. 4B, the floating potential (e.g., V_(FP) of FIG. 4B)may be adjusted (and controlled) to a known potential (e.g., zero voltsor other). Accordingly, the energy levels of the atoms at the surface ofthe substrate may take the same potential (e.g., as their ground state)and no reaction at the surface of the substrate may be observed, or inother words and as shown in FIGS. 6A-6C, the reaction rate, RR, of thetargeted bonds (which are at the ground state) is at zero. As thebiasing voltage, V_(B), increases, the reaction rate, RR, of thetargeted bonds remains at zero, up to the reaction cutoff voltage,V_(RCO), after which a small amount (e.g., minority) of the targetedbonds slowly begin to react, or in other words, a minority of thetargeted bonds reach their respective excited states. As the biasingvoltage, V_(B), increases beyond the reaction cutoff voltage, V_(RCO),the reaction rate, RR, slowly increases with gradually more of thetargeted bonds reaching their respective excited states. When thebiasing voltage, V_(B), reaches the reaction threshold voltage, V_(RTH),a majority of the targeted bonds begin to react (e.g., reach theirrespective excited states) and with further increase of the biasingvoltage, V_(B), the reaction rate, RR, increases according to a(substantially) fixed slope, which continues until the biasing voltage,V_(B), reaches the reaction threshold variation voltage, V_(RTHV).Between the reaction threshold voltage, V_(RTH), and the reactionthreshold variation voltage, V_(RTHV), the reaction rate, RR, increasesuntil (almost) all of the targeted bonds react. As shown in FIGS. 6A-6C,further increase of the biasing voltage, V_(B), beyond the reactionthreshold variation voltage, V_(RTHV), marginally increases the reactionrate, RR, or in other words, to a point of “diminishing returns”. On theother hand, as the biasing voltage, V_(B), decreases, the reaction rate,RR, follows the same graphs shown in FIGS. 6A-6C. In particular, whenthe biasing voltage, V_(B), decreases to a level that is below thereaction cutoff voltage, V_(RCO), the reaction rate, RR, falls to zeroas all of the targeted bonds at the surface of the substrate return totheir respective ground states.

As can be clearly taken from the graphs shown in FIGS. 6A-6C, the(substantially) fixed slope of the reaction rate, RR, between thevoltages, V_(RTH) and V_(RTHV), or in other words, the differencebetween such two voltages, may be a function of a material used in (thesurface of) the substrate being processed. In particular, the differencebetween the voltages, V_(RTH) and V_(RTHV), may be due: to atomic levelimperfections on surface of a single crystal material such as a,semiconductor or insulator (e.g., FIG. 6A); to atomic levelimperfections on surface of a metal, metal alloy or nano-material andrelated grain boundaries (e.g., FIG. 6B); or to presence of3-dimensional (3D) structures of a polymer, a composite or other 3Dmaterial (e.g., FIG. 6C). As described later in the present disclosure,teachings according to the present disclosure describe a waveform toproduce a biasing signal having a voltage level, V_(B), that isspecifically targeted to the material used in the substrate such as tocontrol activation (or deactivation) of the reaction governed by thereaction rate, RR, graphs shown in, for example, FIGS. 6A-6C. Inparticular, specific waveforms for each of the materials represented bythe reaction rate, RR, graphs of FIG. 6A, FIG. 6B and FIG. 6C arerespectively shown in FIG. 7A, FIG. 7B and FIG. 7C.

FIGS. 7A-7C show graphs representative of waveforms for EEMP biasingsignals, V(t), according to some exemplary embodiments of the presentdisclosure for processing of different materials. In particular, FIG. 7Ashows a waveform for processing of a single crystal material such as asemiconductor or insulator; FIG. 7B shows a waveform for processing of ametal, metal alloy or nano-material; and FIG. 7C shows a waveform forprocessing of a polymer, a composite, or a 3D material. It should benoted that such graphs represent ideal voltage levels (e.g., V_(B),V_(BN)) of the biasing signal, V(t), for use in the EEMP processaccording to the present disclosure described above, which may includecontrol of the potential, V_(FP), to a known level, such as zero voltsor other fixed known level, and energizing of free electrons in the DCplasma with voltage/potential levels (e.g., V_(B)) that are referencedto the potential, V_(FP).

Each of the graphs of FIGS. 7A-7C represents one cycle, denoted as,T_(EEMP), of the waveform for the (periodic) biasing signal, V(t). TheEEMP processing of a material on a surface of a substrate may beperformed by the biasing signal, V(t), generated via a repetition of apredetermined number of cycles, T_(EEMP), according to a priori acquiredprocess knowledge. Different EEMP processing (e.g., having respective RRcharacteristics) may be sequentially performed on a same substrate inview of layers of different material in the substrate and/or differentoperating conditions of the DC plasma reaction chamber and/or(controlled/preset) level of the potential, V_(FP).

With continued reference to FIGS. 7A-7C, according to an embodiment ofthe present disclosure, the cycle, T_(EEMP), of the waveform of thebiasing signal, V(t), may include three distinct phases (e.g., timeintervals, time segments), ΔT_(BP), ΔT_(BN), and ΔT_(BZ), respectivelyincluding a voltage level that is above zero volts (or the referencevoltage level), below zero volts, and equal to zero volts. In otherwords, during the time interval, ΔT_(BP), a level, V_(B), of the biasingsignal, V(t), is strictly greater than zero volts (or the referencevoltage level); during the time interval, ΔT_(BN), the level, V_(BN), ofthe biasing signal, V(t), is strictly less than zero volts; and duringthe time interval, ΔT_(BZ), the level of the biasing signal, V(t), isequal to the zero volts.

According to an embodiment of the present disclosure, the duration ofthe cycle, T_(EEMP), of the waveform shown in FIGS. 7A-7C may be in arange from 1 μs to 10 μs, or in other words, a frequency of the biasingsignal, V(t), may be in a range from 100 KHz to 1 MHz. According to afurther embodiment of the present disclosure, the waveform of thebiasing signal, V(t), may be free of a DC component, or in other words,an integral over a cycle of the waveform shown in FIGS. 7A-7C may have avalue of zero. Such DC-free characteristic of the waveform according tothe present teachings may allow for maintaining an average local surfacepotential of the substrate during application of the biasing signal,V(t), that is (substantially) equal to the preset/controlled localsurface potential (e.g., V_(FP)) of the substrate as described abovewith reference to, for example, FIGS. 2A-4C. In other words, the DC-freecharacteristic of the waveform may allow application of (substantially)same voltage levels (e.g., V_(B), V_(BN)) shown in FIGS. 7A-7C (to freeelectrons) on the surface of the substrate. It should be noted that fora case where the potential V_(FP) is adjusted (e.g., preset, controlled)to a (fixed and known) level that is different from zero volts, thewaveform may be adjusted to include a DC component that is equal to thelevel of the potential V_(FP), or in other words, by replacing the 0Vreference in FIGS. 7A-7C with the adjusted value of the potentialV_(FP).

According to an embodiment of the present disclosure, length of each ofthe time intervals ΔT_(BP), ΔT_(BN), and ΔT_(BZ) shown in FIGS. 7A-7Cmay be based on the type of material (at the surface) of the substrate,including the corresponding reaction rate, RR, described above withreference to FIGS. 6A-6C. In particular, a ratio of a length of the timeinterval ΔT_(BP) to a length of the time interval ΔT_(BN) may be in arange from (about) 1/10 to (about) 1/1. For example, for a case of acrystal material (e.g., FIG. 7A) the ratio may be about 10/65 (+/−10%);for a case of a metal material (e.g., FIG. 7B) the ratio may be about1/2 (+/−10%); and for a case of a complex material (e.g., FIG. 7C) theratio may be about 1/1 (+/−10%). Furthermore, as shown in FIGS. 7A-7C, aratio of a length of the time interval ΔT_(BZ) to a length of the entirecycle, T_(EEMP), may be about ¼ (+/−10%). According to a nonlimitingembodiment of the present disclosure, the length of the time intervalΔT_(BZ) may be solely based on the length of the entire cycle, T_(EEMP),and independent from respective lengths of the time intervals ΔT_(BP)and ΔT_(BN).

For an exemplary nonlimiting case shown in FIGS. 7A-7C, a ratio of thetime intervals (ΔT_(BP), ΔT_(BN), ΔT_(BZ)) to the length of the entirecycle, T_(EEMP), may be about (e.g., +/−10%): (10/100, 65/100, 25/100)for a case of a crystal material (e.g., FIG. 7A); (25/100, 50/100,25/100) for a case of a metal material (e.g., FIG. 7B); and (37.5/100,37.5/100, 25/100) for a case of a complex material (e.g., FIG. 7C). Itshould be noted that FIGS. 7A-7C show a cycle, T_(EEMP), having a lengthof 4 μs (frequency of 250 KHz) which should not be considered aslimiting the scope of the present disclosure, since as described abovein the present disclosure, such length may be in a range from 1 μs to 10μs (e.g., frequency of 100 KHz to 1 MHz).

With continued reference to the waveform of FIGS. 7A-7C, during thephase, ΔT_(BP), the waveform may set the biasing voltage, V(t), to a(positive) level (e.g., V_(B)) for activation of the (targeted) EEMPreaction on the surface of the substrate that is based on collision ofenergized (free) electrons with the targeted bonds at the surface of thesubstrate (e.g., with a surface material comprising a single crystal forFIG. 7A, a metal for FIG. 7B, and a complex material for FIG. 7C).According to an embodiment of the present disclosure, a length duringwhich the (high) level, V_(B), of the biasing voltage, V(t), ismaintained must be long enough to hold the energized (free) electrons atthe surface of the substrate to react with the targeted bonds. It shouldbe noted that such length may not include (portion of) the rising orfalling slopes contained in the phase, ΔT_(BP), shown in FIGS. 7A-7C(e.g., during which the biasing voltage (V(t) is not at the target highlevel, V_(B)).

Furthermore, during the phase, ΔT_(BN), the waveform of FIGS. 7A-7C mayset the biasing signal, V(t), to a (negative) level, V_(BN), fordeactivation of the EEMP reaction on the surface of the substrate and tofurther discharge (e.g., repel) any free electrons from the surface ofthe substrate, thereby neutralizing a charge on the substrate. It shouldbe noted that during the phase, ΔT_(BN), a kinetic energy may beimparted by the (negative) level, V_(BN), of the biasing signal, V(t),to free ions in the DC plasma which may therefore cause the energizedfree ions to slowly move toward the surface of the substrate, therebyfurther participating in the neutralization of the substrate. It shouldfurther be noted that due to their low energy levels, the energized freeions may (must) not cause any reaction with bonds at the surface of thesubstrate. A magnitude of the voltage level, V_(BN), of the basingsignal, V(t), may therefore be sufficiently high (e.g., more negative)to cause the free ions to move slowly, and a duration of the phase,ΔT_(BN), may be sufficiently long to cause, in combination with themagnitude of the voltage level, V_(BN), and duration of the phase,ΔT_(BP), suppression (or control) of a DC component of the biasingsignal V(t).

During the phase, ΔT_(BZ), the waveform of FIGS. 7A-7C may set a voltagelevel of the biasing signal, V(t), to zero (or at a same preset level ofthe floating potential, V_(FP)). Accordingly, the phase, ΔT_(BZ), may beused to restore a same initial biasing condition of the substrate forthe start of each cycle, T_(EEMP), of the biasing signal, V(t), suchinitial biasing condition based on the preset level of the floatingpotential, V_(FP). This in turn may allow for a more stable and accurateprocess (EEMP) when compared to other prior art processes. Accordingly,based on the provided description, each of the phases ΔT_(BP), ΔT_(BN),and ΔT_(BZ) of the cycle, T_(EEMP), that describe the waveform of thebiasing signal, V(t), may respectively be referred to as: an active(EEMP) reaction phase; a (EEMP) neutralization phase; and an (EEMP)initialization phase, where the latter two phases are inactive phaseswith respect to the targeted (EEMP) reaction.

FIG. 8A shows a graph representative of an idealized waveform for theEEMP biasing signals, V(t), described above with reference to FIGS.7A-7C, including further timing details (e.g., time intervals t_(BR),t_(BH), and t_(BR)) that describe respective portions of the waveformduring the active phase, ΔT_(BP). In particular, the time interval,t_(BR), may define a transition duration of time that takes the biasingsignal, V(t), to reach the target high level, V_(B), from a start value(e.g., V(t)=0) at start of the phase; the time interval, t_(BH), maydefine an effective duration of time during which the biasing signal,V(t), is at the target high level, V_(B); and the time interval, t_(BF),may define a transition duration of time that takes the biasing signal,V(t), to go back to the start value (e.g., V(t)=0) at the end of theactive phase, ΔT_(BP). In other words, the time interval, t_(BR), maydefine the rising (e.g., leading) edge slope of the biasing signal,V(t), to reach the high level, V_(B), from the start value, and the timeinterval, t_(BF), may define the falling (e.g., trailing) edge slope ofthe biasing signal, V(t), to go back to the start value.

With continued reference to FIG. 8A, during the time interval, t_(BH),the biasing signal, V(t) is at the high level, V_(B), which is above(greater than) the reaction threshold voltage, V_(RTH), and therefore,as described above with reference to, for example, FIGS. 6A-6C, thetargeted bonds may reach their respective excited states so long that,as described above with reference to, for example, FIGS. 7A-7C, theduration of the time interval, t_(BH), is sufficiently long to hold theenergized (free) electrons on the surface of the substrate to react withthe targeted bonds. According to an exemplary embodiment of the presentdisclosure, a ratio of a length of the time interval, t_(BH), to alength of the active phase, ΔT_(BP), may be in a range from about ¼(e.g., +/−10%) to about ¾ (e.g., +/−10%). Accordingly, considering acase for EEMP processing of a single crystal material (e.g., FIG. 6A andFIG. 7A described above), with a periodic biasing signal, V(t), having afrequency of 250 KHz, and therefore a length of the cycle, T_(EEMP),equal to 4 μs, then the length of the time interval, t_(BH), may be in arange from about 0.1 μs to about 0.3 μs.

With further reference to FIG. 8A, as the biasing signal, V(t), rises atthe start of the active phase, ΔT_(BP), a level of the biasing signal,V(t), that is above the reaction threshold voltage, V_(RTH), may bereached during a portion of the time interval, t_(BR). Likewise, as thebiasing signal, V(t), decreases at the end of the time interval, t_(BH),a level of the biasing signal, V(t), that is above the reactionthreshold voltage, V_(RTH), may be maintained during a portion of thetime interval, t_(BF). Accordingly, in an ideal case where the voltagelevels shown in FIG. 8A are effectively seen by the free electrons inthe DC plasma, then the portions of the time intervals, t_(BR) andt_(BF), where the level of the biasing signal, V(t), is above thereaction threshold voltage, V_(RTH), may be included in thedetermination (or interpretation) of the reaction rate, RR, graphsdescribed above with reference to FIGS. 6A-6C. However, as the risingand falling edge slopes defined by the time intervals, t_(BR) andt_(BF), may be very steep (high level V_(B) can be in a range from 10volts to about 200 volts), said portions of time may be regarded asirrelevant/insignificant when compared to a minimum amount of timerequired to hold the energized (free) electrons on the surface of thesubstrate to react with the targeted bonds.

FIG. 8B shows a graph representative of a practical waveform for theEEMP biasing signals. Such waveform represents a practically achievablewaveform that may be modelled from the ideal waveform described abovewith reference to FIG. 8A. In particular, the practical waveform of FIG.8B includes gradual and curved transitions to/from corresponding steadystate levels (e.g., V_(B), V_(BN), zero volts) as shown in the figure.Such practical waveform may be generated by an electronic instrument,that may include a power amplifier (e.g., such as for example, coupledto or part of, the biasing signal generator of FIG. 4A), whose output iscoupled to a load under perfect matching conditions. However, suchperfect matching conditions may not be provided by the capacitive load(e.g., stage S of FIG. 4A) in the DC plasma processing according to thepresent disclosure, and therefore, as shown in FIG. 8C, signalreflections and related distortions may be expected, including ringing,prior to settling to the steady state levels (e.g., V_(B), V_(BN), zerovolts).

The ringing shown in FIG. 8C may include ringing (e.g., V_(BU)) of thebiasing signal, V(t), during the active phase, ΔT_(BP), prior tosettling to the target high level, V_(B), as well as during theneutralization phase, ΔT_(BN), prior to settling to the target lowlevel, V_(BN). As shown in FIG. 8C, the ringing during the active phase,ΔT_(BP), may be represented by an uncertainty voltage spread, V_(BU),that extends above the target high level, V_(B), by an overshootvoltage, V_(BOS), and extends below the target high level, V_(B), by anundershoot voltage, V_(BUS). A person skilled in the art will clearlyrealize that the uncertainty voltage spread, V_(BU), may perturbactivation of the EEMP targeted reaction during the active phase,ΔT_(BP), as the undershoot voltage, V_(BUS), may cause a level of thebiasing signal, V(t), to fall below the reaction threshold voltage,V_(RTH), and the overshoot voltage, V_(BOS), may cause a level of thebiasing signal, V(t), to reach a reaction threshold voltage, V_(RTH), ofnon-targeted bonds that may be present at the surface of the substrate.On the other hand, the ringing during the neutralization phase, ΔT_(BN),may not noticeably affect the EEMP process as the free ions are heldwell below the reaction energy for any ion driven reactions (e.g.,thermal chemistry reactions). According to an embodiment of the presentdisclosure, a reduction of the ringing shown in FIG. 8C, including theringing during the active phase, ΔT_(BP), may be provided bypredistortion (e.g., distortion compensation) of the biasing signal,V(t).

FIG. 9A shows graphs representative of a digitized waveform (WF, digitalsamples marked by circles) for generation of the practical waveform ofFIG. 8B, and a corresponding digitized waveform with predistortion(WF_(P), digital samples marked by squares). In particular, generationof the practical waveform of FIG. 8B may be provided by uploadingcorresponding digital samples of the digitized waveform, WF, to adigital signal generator whose output may be provided to a poweramplifier (e.g., such as for example, coupled to or part of, the biasingsignal generator of FIG. 4A). Likewise, generation of a correspondingpractical waveform with predistortion may be provided by uploading thedigital samples of the digitized waveform with predistortion, WF_(P), tothe digital signal generator.

With continued reference to FIG. 9A, predistortion may be used toalter/equalize the slopes/transitions of the digitized waveform withpredistortion, WF_(P), such as to generate a practical pre-distortedwaveform (e.g., WF_(P)) that when subjected to the capacitive loadingconditions of the stage (e.g., S of FIG. 4A), as shown in FIG. 9B, areduction in the amount of ringing may be provided. As shown in FIG. 9B,use of the predistortion may cause a reduction of the uncertaintyvoltage spread, V_(BU), such as during the entire active phase, ΔT_(BP),a level of the biasing signal, V(t), may remain above the targetedreaction threshold voltage, V_(RTH), and below any non-targeted reactionthreshold voltage, V_(RTH). It should be noted that such predistortionmay result in a waveform that includes a desired length of the timeinterval, t_(BH), during which the biasing signal, V(t), is at thetarget high level, V_(B). In other words, the predistortion may preservethe length of the time interval, t_(BH), described above with referenceto, for example, FIG. 8A.

FIG. 10A shows graphs representative of gain versus frequency (e.g.,graph G₁) of a band-limited linear power amplifier according to anembodiment of the present disclosure and a gain versus frequency (e.g.,graph G₂) of a conventional power amplifier. According to an embodimentof the present disclosure, the bandlimited linear power amplifier usedfor the EEMP processing, may include a gain, G₁, that is flat within0.75 dB in a frequency range from 10 KHz to 10 MHz as shown in FIG. 10A.Such operating (passband) range of the bandlimited linear poweramplifier is selected in view of the 100 KHz to 1 MHz frequency range ofoperation of the biasing signal, V(t), such as to reduce anycorresponding (higher frequency) harmonics that may be reflected fromthe capacitive load and generate distortion of the signal, includingportion of the ringing (e.g., the uncertainty voltage spread, V_(BU))shown in FIG. 8C and FIG. 9B.

FIG. 10B shows a graph representative of an analog waveform generatedfrom the digitized waveform with predistortion, WF_(P), of FIG. 9Athrough the band-limited linear power amplifier of FIG. 10A undercapacitive loading conditions. In particular, when compared to thewaveform described above with reference to FIG. 9B, a reduction in theuncertainty voltage spread, V_(BU), may be observed, indicative of aneven larger process window for control/operation of the targeted EEMPreaction. It should be noted that the waveform of FIG. 9B may bereproduced by the conventional power amplifier whose gain versusfrequency, G₂, is shown in FIG. 10A. In particular, as shown in FIG.10A, a cut off frequency, f_(C2), of the conventional power amplifierbeing substantially greater than a cut off frequency, f_(C1), of theband-limited linear power amplifier according to the present teachings,may pass the higher frequency harmonics of the biasing signal, V(t), andtherefore reproduce such harmonics as distortion.

FIG. 11 is a process chart (1100) showing various steps of a methodaccording to an embodiment of the present disclosure for processing asurface of a substrate. As shown in FIG. 11 , such steps comprise:placing a substrate on a support stage in a region of a DC plasmareaction chamber configured to produce a positive column of DC plasma,according to step (1110); generating the DC plasma, according to step(1120); presetting a floating potential at the surface of the substrateto a reference potential, according to step (1130), and; capacitivelycoupling, to the support stage, a periodic biasing signal having abiasing voltage that is referenced to the floating potential, theperiodic biasing signal comprising: an active phase having a positivevoltage that is based on a known reaction threshold voltage of targetedchemical bonds of atoms at the surface of a substrate; a neutralizationphase having a negative voltage; and an initialization phase having azero voltage, according to step (1140).

A number of embodiments of the disclosure have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the presentdisclosure. Accordingly, other embodiments are within the scope of thefollowing claims.

The examples set forth above are provided to those of ordinary skill inthe art as a complete disclosure and description of how to make and usethe embodiments of the disclosure and are not intended to limit thescope of what the inventor/inventors regard as their disclosure.

Modifications of the above-described modes for carrying out the methodsand systems herein disclosed that are obvious to persons of skill in theart are intended to be within the scope of the following claims. Allpatents and publications mentioned in the specification are indicativeof the levels of skill of those skilled in the art to which thedisclosure pertains. All references cited in this disclosure areincorporated by reference to the same extent as if each reference hadbeen incorporated by reference in its entirety individually.

It is to be understood that the disclosure is not limited to particularmethods or systems, which can, of course, vary. It is also to beunderstood that the terminology used herein is for the purpose ofdescribing particular embodiments only and is not intended to belimiting. As used in this specification and the appended claims, thesingular forms “a,” “an,” and “the” include plural referents unless thecontent clearly dictates otherwise. The term “plurality” includes two ormore referents unless the content clearly dictates otherwise. Unlessdefined otherwise, all technical and scientific terms used herein havethe same meaning as commonly understood by one of ordinary skill in theart to which the disclosure pertains.

1. A method for processing a surface of a substrate, the methodcomprising: placing a substrate on a support stage in a region of a DCplasma reaction chamber configured to produce a positive column of DCplasma; generating the DC plasma; presetting a potential at the surfaceof the substrate to a reference potential; and capacitively coupling, tothe support stage, a periodic biasing signal having a biasing voltagethat is referenced to the reference potential, the periodic biasingsignal comprising: an active phase having a positive voltage that isbased on a known reaction threshold voltage of targeted chemical bondsof atoms at the surface of a substrate; a neutralization phase having anegative voltage; and an initialization phase having a zero voltage. 2.The method according to claim 1, the method further comprising:arranging a reference plate made of a conductive material in the regionof the DC plasma reaction chamber that contains the positive column ofthe DC plasma; based on the arranging, measuring a potential at thesurface of the reference plate; and based on the measuring, presettingthe potential at the surface of the reference plate, thereby presettingthe potential at the surface of the substrate.
 3. The method accordingto claim 2, the method further comprising: adjusting a potential at ananode of the DC plasma reaction chamber; and based on the adjusting,presetting the potential at the surface of the reference plate.
 4. Themethod according to claim 1, wherein: the positive voltage is a presetvoltage that is based on a known reaction threshold voltage of targetedchemical bonds of atoms at the surface of a substrate placed on thesupport stage.
 5. The method according to claim 1, wherein: the positivevoltage is equal to, or greater than, a reaction threshold voltage oftargeted chemical bonds of atoms at the surface of a substrate placed onthe support stage.
 6. The method according to claim 5, wherein: thepositive voltage is smaller than a reaction threshold voltage ofnon-targeted chemical bonds of atoms at the surface of the substrate. 7.The method according to claim 5, wherein: the positive voltage isstrictly greater than the reaction threshold voltage of the targetedchemical bonds of atoms for a duration of time that is in a range from ¼to ¾ of a total time length of the active phase.
 8. The method accordingto claim 5, wherein: the negative voltage has a magnitude that issufficiently low to hold energy levels of free ions in the positivecolumn below reaction energy levels of all chemical bonds of atoms atthe surface of the substrate.
 9. The method according to claim 8,wherein: a DC content of the periodic biasing signal is zero.
 10. Themethod according to claim 9, wherein: a frequency of the periodicbiasing signal is in a range from 100 KHZ to 1 MHz.
 11. The methodaccording to claim 10, wherein: a ratio of a time length of the activephase to a time length of the neutralization phase is in a range from1/10 to 1/1.
 12. The method according to claim 11, wherein: a ratio of atime length of the initialization phase to a time length of one cycle ofthe periodic biasing signal is about ¼.
 13. The method according toclaim 11, wherein: the targeted chemical bonds are of atoms of amaterial that consists of one of: a) a single crystal; b) a metal; or c)a complex or 3D material.
 14. The method according to claim 13, wherein:the single crystal includes a semiconductor or insulator material. 15.The method according to claim 14, wherein: the ratio of the time lengthof the active phase to the time length of the neutralization phase isabout 1/10.
 16. The method according to claim 13, wherein: the targetedchemical bonds are of atoms of a metal or metal alloy, and the ratio ofthe time length of the active phase to the time length of theneutralization phase is about 1/2.
 17. The method according to claim 13,wherein: the complex or 3D material includes one of: a polymer; acomposite or a three-dimensional material.
 18. The method according toclaim 17, wherein: the ratio of the time length of the active phase tothe time length of the neutralization phase is about 1/1.
 19. The methodaccording to claim 1, further comprising: generating a predistortion inthe periodic biasing signal, the predistortion configured to reduceringing during the active phase.
 20. The method according to claim 19,wherein: the generating of the predistortion in the periodic biasingsignal is based on providing, to a digital signal generator, digitalsamples that include distortion compensation.
 21. The method accordingto claim 20, wherein: the generating of the periodic biasing signal isfurther based on providing, to a bandlimited linear power amplifier, anoutput of the digital signal generator to generate therefrom theperiodic biasing signal that is capacitively coupled to the supportstage, wherein the bandlimited linear power amplifier comprises a gainthat is flat to within 0.75 dB in a frequency range from 10 KHz to 10MHz, and the bandlimited linear power amplifier is configured tosubstantially block harmonics of the periodic biasing signal.